Suppression of oxygen diffusion from MoOx to BaSi2 by hydrogenated amorphous Si layers (Materials Science in Semicondutor Processing)

Y. Fukaya, S. Aonuki, K. Kajihara, K. Toko and T. Suemasu,
“Suppression of oxygen diffusion from MoOx to BaSi2 by hydrogenated amorphous Si layers”,
Materials Science in Semicondutor Processing 197 (2025) 109732. (DOI:10.1016/j.mssp.2025.109732)