Structure of the very first atomic layer of Ga oxide on GaN at GaN oxidation front (Applied Physics Letters)

E. Kano, S. Hattori, K. Shiraishi, A. Oshiyama, T. Umeda, T. Narita, T. Kachi and N. Ikarashi,
“Structure of the very first atomic layer of Ga oxide on GaN at GaN oxidation front”,
Applied Physics Letters 127 (2025) 032112. (DOI:10.1063/5.0274521)