Rational Device Design and Doping-Controlled Performance in Fast-Response π-Ion Gel Transistors (Advanced Functional Materials)

M. Kato, S. Kushida, N. U. Draz, D. Kyotani, E. Smarsly, K. Yoshinaga, W. He, U. H. F. Bunz, K. Marumoto, T. Mori and Y. Yamamoto,
“Rational Device Design and Doping-Controlled Performance in Fast-Response π-Ion Gel Transistors”,
Advanced Functional Materials (2026). (DOI:10.1002/adfm.202521674)