Low-temperature process design for inversion mode n-channel thin-film-transistor on polycrystalline Ge formed by solid-phase crystallization (Japanese Journal of Applied Physics)
L. Huang, K. Moto, K. Igura, T. Ishiyama, K. Toko, D. Wang, and K. Yamamoto,
“Low-temperature process design for inversion mode n-channel thin-film-transistor on polycrystalline Ge formed by solid-phase crystallization”,
Japanese Journal of Applied Physics 63 (2024) 02SP42. (DOI:10.35848/1347-4065/ad13a1)
投稿日:2024年1月5日