Influence of Oxygen Partial Pressure on Sputtered NiOx Film Characteristics and Deep Interface Trap Density in NiOx/β-Ga2O3 Heterojunction Diodes (ACS Applied Materials and Interfaces)

Y. Jia, Y. Sasaki, A. Traoré, R. Morita, H. Okumura and T. Sakurai,
“Influence of Oxygen Partial Pressure on Sputtered NiOx Film Characteristics and Deep Interface Trap Density in NiOx/β-Ga2O3 Heterojunction Diodes”,
ACS Applied Materials and Interfaces 18 (2026) 17973-17981. (DOI:10.1021/acsami.5c24691)