Influence of acceptor-type trap states on 2DEG density in β-(Al0.15Ga0.85)2O3/Ga2O3 HFET (Materials Science in Semiconductor Processing)

Y. Jia, F. F. Florena, A. Traoré, R. Morita, H. Okumura and T. Sakurai,
“Influence of acceptor-type trap states on 2DEG density in β-(Al0.15Ga0.85)2O3/Ga2O3 HFET”,
Materials Science in Semiconductor Processing 203 (2026) 110260. (DOI:10.1016/j.mssp.2025.110260)