High-Mobility p-Channel Thin-Film Transistors Based on Polycrystalline GeSn (Advanced Electronic Materials)
K. Moto, S. Maeda, K. Igura, L. Kuang, A. Morimoto, K. Yamamoto and K. Toko,
“High-Mobility p-Channel Thin-Film Transistors Based on Polycrystalline GeSn”,
Advanced Electronic Materials 11 (2025) 2400901. (DOI: 10.1002/aelm.202400901)
投稿日：2025年4月1日