Defect passivation by annealing enables stable transport in Li-doped Mg2Sn epitaxial films for microfabricated thermoelectric devices (Journal of Materials Chemistry A)

K. M. Senados, T. Aizawa, I. Ohkubo, M. Murata, T. Baba, A. Ohi, A. Uedono, T. Sakurai and T. Mori,
“Defect passivation by annealing enables stable transport in Li-doped Mg₂Sn epitaxial films for microfabricated thermoelectric devices”,
Journal of Materials Chemistry A 14 (2026) 10764-10775. (DOI:10.1039/d5ta09310e)