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テクノロジー研究センター

Deep-level transient spectroscopy of defect states at p-type oxide/β-Ga2O3 heterojunctions (Applied Physics Letters)

Y. Jia, A. Traoré, R. Morita, F. F. Florena, M. M. Islam, and T. Sakurai,
“Deep-level transient spectroscopy of defect states at p-type oxide/β-Ga₂O₃ heterojunctions”,
Applied Physics Letters 125 (2024) 073504. (DOI:10.1063/5.0214226)