Advancing N-type doping in semiconductors through hydrogen-defect interactions (Communication Materials)
A. Kiyoi, Y. Nishiya, Y. Matsushita and T. Umeda,
“Advancing N-type doping in semiconductors through hydrogen-defect interactions”,
Communication Materials 7 (2026) 8. (DOI:10.1038/s43246-025-00955-4)
投稿日：2026年1月13日